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1. product profile 1.1 general description npn low v cesat breakthrough in small signal (biss) transistor in a sot89 (sc-62/ to-243) smd plastic package. pnp complement: pbss9110x. 1.2 features ? sot89 package ? low collector-emitter sa turation voltage v cesat ? high collector curr ent capability: i c and i cm ? high efficiency leading to less heat generation 1.3 applications ? major application segments: ? automotive 42 v power ? telecom infrastructure ? industrial ? peripheral driver: ? driver in low supply voltage app lications (e.g. lamps and leds) ? inductive load driver (e.g. relays, buzzers and motors) ? dc-to-dc converter 1.4 quick reference data [1] pulse test: t p 300 s; 0.02. PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor rev. 02 ? 11 december 2009 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 100 v i c collector current (dc) - - 1 a i cm peak collector current single pulse; t p 1ms --3 a r cesat collector-emitter saturation resistance i c =1a; i b =100ma [1] - 165 200 m
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 2 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 2. pinning pin description simplified outline symbol 1emitter 2 collector 3base 321 sym04 2 1 2 3 table 3. ordering information type number package name description version PBSS8110X sc-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads sot89 table 4. marking codes type number marking code [1] PBSS8110X *4b
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 3 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 120 v v ceo collector-emitter voltage open base - 100 v v ebo emitter-base voltage open collector - 5 v i c collector current (dc) - 1 a i cm peak collector current single pulse; t p 1ms -3a i b base current (dc) - 300 ma p tot total power dissipation t amb 25 c [1] -0.55w [2] -1.4w [3] -2.0w t j junction temperature - 150 c t amb ambient temperature ? 65 +150 c t stg storage temperature ? 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb; mounting pad for collector 6cm 2 (3) fr4 pcb; standard footprint fig 1. power derating curves t amb ( c) 0 160 120 40 80 006aaa408 0.8 1.2 0.4 1.6 2.0 p tot (w) 0 (1) (2) (3)
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 4 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 227 k/w [2] --89k/w [3] --63k/w r th(j-sp) thermal resistance from junction to solder point --16k/w fr4 pcb; standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa409 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 duty cycle =
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 5 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor fr4 pcb; mounting pad for collector 6cm 2 fig 3. transient thermal impedance from junction to ambient as a function of pulse time; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa411 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 duty cycle = 006aaa410 10 1 10 2 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 duty cycle =
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 6 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 s; 0.02. table 7. characteristics t amb = 25 c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =80v; i e = 0 a - - 100 na v cb =80v; i e =0a; t j = 150 c --50 a i ces collector-emitter cut-off current v ce =80v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =4v; i c = 0 a - - 100 na h fe dc current gain v ce =10v; i c =1ma 150 - - v ce =10v; i c = 250 ma 150 - 500 v ce =10v; i c = 500 ma [1] 100 - - v ce =10v; i c =1a [1] 80 - - v cesat collector-emitter saturation voltage i c =100ma; i b =10ma --40mv i c =500ma; i b =50ma --120mv i c =1a; i b = 100 ma [1] --200mv r cesat collector-emitter saturation resistance i c =1a; i b = 100 ma [1] - 165 200 m v besat base-emitter saturation voltage i c =1a; i b = 100 ma - - 1.05 v v beon base-emitter turn-on voltage v ce =10v; i c =1a --0.9v t d delay time v cc =10v; i c =0.5a; i bon = 0.025 a; i boff = ? 0.025 a -25-ns t r rise time - 220 - ns t on turn-on time - 245 - ns t s storage time - 365 - ns t f fall time - 185 - ns t off turn-off time - 550 - ns f t transition frequency v ce =10v; i c =50ma; f=100mhz 100 - - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz --7.5pf
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 7 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor v ce =10v (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c v ce =10v (1) t amb = ? 55 c (2) t amb = 25 c (3) t amb = 100 c fig 5. dc current gain as a function of collector current; typical values fig 6. base-emitter voltage as a function of collector current; typical values i c /i b =10 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c i c /i b = 20; t amb = 25 c fig 7. collector-emitter saturation voltage as a function of collector current; typical values fig 8. collector-emitter saturation voltage as a function of collector current; typical values 001aaa497 200 400 600 h fe 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) 001aaa495 v be (mv) i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) 600 400 800 1000 200 (1) (2) (3) 001aaa504 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 001aaa505 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 2 10 3 v cesat (mv) 10
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 8 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor i c /i b = 50; t amb = 25 ci c /i b =10 (1) t amb = ? 55 c (2) t amb = 25 c (3) t amb = 100 c fig 9. collector-emitter saturation voltage as a function of collector current; typical values fig 10. base-emitter saturation voltage as a function of collector current; typical values i c /i b = 20; t amb = 25 ci c /i b =10 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c fig 11. base-emitter saturation voltage as a function of collector current; typical values fig 12. collector-emitter saturation resistance as a function of collector current; typical values 001aaa506 10 3 10 2 10 4 v cesat (mv) 10 i c (ma) 10 ? 1 10 4 10 3 110 2 10 001aaa498 1200 800 1000 400 600 v besat (mv) 200 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) 001aaa499 1200 1000 800 600 v besat (mv) 400 i c (ma) 10 ? 1 10 4 10 3 110 2 10 001aaa501 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (1) (2) (3)
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 9 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor i c /i b = 20; t amb = 25 ci c /i b = 50; t amb = 25 c fig 13. collector-emitter saturation resistance as a function of collector current; typical values fig 14. collector-emitter saturation resistance as a function of collector current; typical values t amb = 25 c fig 15. collector current as a function of collector-emitter voltage; typical values 001aaa502 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 001aaa503 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 v ce (v) 05 4 23 1 001aaa496 0.8 1.2 0.4 1.6 2 i c (a) 0 31.5 24.5 17.5 10.5 28 21 14 7 3.5 i b (ma) = 35
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 10 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 8. test information fig 16. biss transistor sw itching time definition v cc =10v; i c = 0.5 a; i bon = 0.025 a; i boff = ? 0.025 a fig 17. test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 11 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 15 . fig 18. package outline sot89 (sc-62/to-243) 06-08-29 dimensions in mm 4.6 4.4 1.8 1.4 1.6 1.4 1.2 0.8 3 1.5 0.48 0.35 0.44 0.23 0.53 0.40 2.6 2.4 4.25 3.75 123 table 8. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 1000 4000 PBSS8110X sot89 8 mm pitch, 12 mm tape and reel -115 -135
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 12 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 11. soldering 12. mounting reflow soldering is the only recommended soldering method fig 19. reflow soldering footprint sot89 (sc-62/to-243) msa442 1.00 (3x) 4.85 4.60 1.20 4.75 0.60 (3x) 0.70 (3x) 3.70 3.95 1.20 0.50 1.70 1 32 0.20 0.85 1.20 1.20 1.90 2.00 2.25 solder lands solder resist occupied area solder paste dimensions in mm fig 20. fr4 pcb, standard footprint fig 21. fr4 pcb, mounting pad for collector 6cm 2 001aaa234 2.5 mm 5 mm 1.6 mm 0.5 mm 1 mm 3.96 mm 3 mm 2.5 mm 1 mm 40 mm 32 mm 001aaa235 2.5 mm 5 mm 1.6 mm 0.5 mm 1 mm 3.96 mm 30 mm 20 mm 40 mm 32 mm
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 13 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 13. revision history table 9. revision history document id release date data sheet status change notice supersedes PBSS8110X_2 20091211 product data sheet - PBSS8110X_1 modifications: ? this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content. ? figure 5 : updated ? figure 7 : v cesat axis unit amended from mv to v ? figure 15 : updated ? figure 18 ? package outline sot89 (sc-62/to-243) ? : updated ? figure 19 ? reflow soldering footprint sot89 (sc-62/to-243) ? : updated PBSS8110X_1 20050511 product data sheet - -
PBSS8110X_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 11 december 2009 14 of 15 nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
nxp semiconductors PBSS8110X 100 v, 1 a npn low v cesat (biss) transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 december 2009 document identifier: PBSS8110X_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 packing information . . . . . . . . . . . . . . . . . . . . 11 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15 contact information. . . . . . . . . . . . . . . . . . . . . 14 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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